• 史上最全晶圓專業術語

    2016-10-21
    Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor.
    受主 - 一種用來在半導體中形成空穴的元素,比如硼、銦和鎵。受主原子必須比半導體元素少一價電子

    Alignment Precision - Displacement of patterns that occurs during the photolithography process.
    套準精度 - 在光刻工藝中轉移圖形的精度。

    Anisotropic - A process of etching that has very little or no undercutting
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    各向異性 - 在蝕刻過程中,只做少量或不做側向凹刻。

    Area Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc.
    沾污區域 - 任何在晶圓片表面的外來粒子或物質。由沾污、手印和水滴產生的污染。

    Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse.
    橢圓方位角 - 測量入射面和主晶軸之間的角度。

    Backside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use ‘back surface’.)
    背面 - 晶圓片的底部表面。(注:不推薦該術語,建議使用“背部表面”)

    Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.
    底部硅層 - 在絕緣層下部的晶圓片,是頂部硅層的基礎。

    Bipolar - Transistors that are able to use both holes and electrons as charge carriers.
    雙極晶體管 - 能夠采用空穴和電子傳導電荷的晶體管。

    Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer.
    綁定晶圓片 - 兩個晶圓片通過二氧化硅層結合到一起,作為絕緣層。

    Bonding Interface - The area where the bonding of two wafers occurs.
    綁定面 - 兩個晶圓片結合的接觸區。

    Buried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.
    埋層 - 為了電路電流流動而形成的低電阻路徑,攙雜劑是銻和砷。

    Buried Oxide Layer (BOX) - The layer that insulates between the two wafers.
    氧化埋層(BOX) - 在兩個晶圓片間的絕緣層。

    Carrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer.
    載流子 - 晶圓片中用來傳導電流的空穴或電子。

    Chemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
    化學-機械拋光(CMP) - 平整和拋光晶圓片的工藝,采用化學移除和機械拋光兩種方式。此工藝在前道工藝中使用。

    Chuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand.
    卡盤痕跡 - 在晶圓片任意表面發現的由機械手、卡盤或托盤造成的痕跡。

    Cleavage Plane - A fracture plane that is preferred.
    解理面 - 破裂面

    Crack - A mark found on a wafer that is greater than 0.25 mm in length.
    裂紋 - 長度大于0.25毫米的晶圓片表面微痕。

    Crater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually.
    微坑 - 在擴散照明下可見的,晶圓片表面可區分的缺陷。

    Conductivity (electrical) - A measurement of how easily charge carriers can flow throughout a material.
    傳導性(電學方面) - 一種關于載流子通過物質難易度的測量指標 。

    Conductivity Type - The type of charge carriers in a wafer, such as “N-type” and “P-type”.
    導電類型 - 晶圓片中載流子的類型,N型和P型。

    Contaminant, Particulate (see light point defect)
    污染微粒 (參見光點缺陷)

    Contamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer.
    沾污區域 - 部分晶圓片區域被顆粒沾污,造成不利特性影響。

    Contamination Particulate - Particles found on the surface of a silicon wafer.
    沾污顆粒 - 晶圓片表面上的顆粒。

    Crystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuit’s electrical performance.
    晶體缺陷 - 部分晶體包含的、會影響電路性能的空隙和層錯。

    Crystal Indices (see Miller indices)
    晶體指數 (參見米勒指數)

    Depletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers.
    耗盡層 - 晶圓片上的電場區域,此區域排除載流子。

    Dimple - A concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions.
    表面起伏 - 在合適的光線下通過肉眼可以發現的晶圓片表面凹陷。

    Donor - A contaminate that has donated extra “free” electrons, thus making a wafer “N-Type”.
    施主 - 可提供“自由”電子的攙雜物,使晶圓片呈現為N型。

    Dopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements.
    攙雜劑 - 可以為傳導過程提供電子或空穴的元素,此元素可以改變傳導特性。晶圓片攙雜 劑可以在元素周期表的III 和 V族元素中發現。

    Doping - The process of the donation of an electron or hole to the conduction process by a dopant.
    摻雜 - 把攙雜劑摻入半導體,通常通過擴散或離子注入工藝實現。

    Edge Chip and Indent - An edge imperfection that is greater than 0.25 mm.
    芯片邊緣和縮進 - 晶片中不完整的邊緣部分超過0.25毫米。

    Edge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. (This varies according to the dimensions of the wafer.)
    邊緣排除區域 - 位于質量保證區和晶圓片外圍之間的區域。(根據晶圓片的尺寸不同而有所不同。)

    Edge Exclusion, Nominal (EE) - The distance between the fixed quality area and the periphery of a wafer.
    名義上邊緣排除(EE) - 質量保證區和晶圓片外圍之間的距離。

    Edge Profile - The edges of two bonded wafers that have been shaped either chemically or mechanically.
    邊緣輪廓 - 通過化學或機械方法連接起來的兩個晶圓片邊緣。

    Etch - A process of chemical reactions or physical removal to rid the wafer of excess materials.
    蝕刻 - 通過化學反應或物理方法去除晶圓片的多余物質。

    Fixed Quality Area (FQA) - The area that is most central on a wafer surface.
    質量保證區(FQA) - 晶圓片表面中央的大部分。

    Flat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes.
    平邊 - 晶圓片圓周上的一個小平面,作為晶向定位的依據。

    Flat Diameter - The measurement from the center of the flat through the center of the wafer to the opposite edge of the wafer. (Perpendicular to the flat)
    平口直徑 - 由小平面的中心通過晶圓片中心到對面邊緣的直線距離。

    Four-Point Probe - Test equipment used to test resistivity of wafers.
    四探針 - 測量半導體晶片表面電阻的設備。

    Furnace and Thermal Processes - Equipment with a temperature gauge used for processing wafers. A constant temperature is required for the process.
    爐管和熱處理 - 溫度測量的工藝設備,具有恒定的處理溫度。

    Front Side - The top side of a silicon wafer. (This term is not preferred; use front surface instead.)
    正面 - 晶圓片的頂部表面(此術語不推薦,建議使用“前部表面”)。

    Goniometer - An instrument used in measuring angles.
    角度計 - 用來測量角度的設備。

    Gradient, Resistivity (not preferred; see resistivity variation)
    電阻梯度 (不推薦使用,參見“電阻變化”)

    Groove - A scratch that was not completely polished out.
    凹槽 - 沒有被完全清除的擦傷。

    Hand Scribe Mark - A marking that is hand scratched onto the back surface of a wafer for identification purposes.
    手工印記 - 為區分不同的晶圓片而手工在背面做出的標記。

    Haze - A mass concentration of surface imperfections, often giving a hazy appearance to the wafer.
    霧度 - 晶圓片表面大量的缺陷,常常表現為晶圓片表面呈霧狀。

    Hole - Similar to a positive charge, this is caused by the absence of a valence electron.
    空穴 - 和正電荷類似,是由缺少價電子引起的。

    Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.
    晶錠 - 由多晶或單晶形成的圓柱體,晶圓片由此切割而成。

    Laser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer.
    激光散射 - 由晶圓片表面缺陷引起的脈沖信號。

    Lay - The main direction of surface texture on a wafer.
    層 - 晶圓片表面結構的主要方向。

    Light Point Defect (LPD) (Not preferred; see localized light-scatterer)
    光點缺陷(LPD) (不推薦使用,參見“局部光散射”)

    Lithography - The process used to transfer patterns onto wafers.
    光刻 - 從掩膜到圓片轉移的過程。

    Localized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect.
    局部光散射 - 晶圓片表面特征,例如小坑或擦傷導致光線散射,也稱為光點缺陷。

    Lot - Wafers of similar sizes and characteristics placed together in a shipment.
    批次 - 具有相似尺寸和特性的晶圓片一并放置在一個載片器內。

    Majority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
    多數載流子 - 一種載流子,在半導體材料中起支配作用的空穴或電子,例如在N型中是電子。

    Mechanical Test Wafer - A silicon wafer used for testing purposes.
    機械測試晶圓片 - 用于測試的晶圓片。

    Microroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 μm.
    微粗糙 - 小于100微米的表面粗糙部分。

    Miller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal.
    Miller索指數 - 三個整數,用于確定某個并行面。這些整數是來自相同系統的基本向量。

    Minimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable.
    最小條件或方向 - 確定晶圓片是否合格的允許條件。

    Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area.
    少數載流子 - 在半導體材料中不起支配作用的移動電荷,在P型中是電子,在N型中是空穴。

    Mound - A raised defect on the surface of a wafer measuring more than 0.25 mm.
    堆垛 - 晶圓片表面超過0.25毫米的缺陷。

    Notch - An indent on the edge of a wafer used for orientation purposes.
    凹槽 - 晶圓片邊緣上用于晶向定位的小凹槽。

    Orange Peel - A roughened surface that is visible to the unaided eye.
    桔皮 - 可以用肉眼看到的粗糙表面

    Orthogonal Misorientation -
    直角定向誤差 -

    Particle - A small piece of material found on a wafer that is not connected with it.
    顆粒 - 晶圓片上的細小物質。

    Particle Counting - Wafers that are used to test tools for particle contamination.
    顆粒計算 - 用來測試晶圓片顆粒污染的測試工具。

    Particulate Contamination - Particles found on the surface of a wafer. They appear as bright points when a collineated light is shined on the wafer.
    顆粒污染 - 晶圓片表面的顆粒。

    Pit - A non-removable imperfection found on the surface of a wafer.
    深坑 - 一種晶圓片表面無法消除的缺陷。

    Point Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom.
    點缺陷 - 不純凈的晶缺陷,例如格子空缺或原子空隙。

    Preferential Etch -
    優先蝕刻 -

    Premium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer.
    測試晶圓片 - 影印過程中用于顆粒計算、測量溶解度和檢測金屬污染的晶圓片。對于具體應用該晶圓片有嚴格的要求,但是要比主晶圓片要求寬松些。

    Primary Orientation Flat - The longest flat found on the wafer.
    主定位邊 - 晶圓片上最長的定位邊。

    Process Test Wafer - A wafer that can be used for processes as well as area cleanliness.
    加工測試晶圓片 - 用于區域清潔過程中的晶圓片。

    Profilometer - A tool that is used for measuring surface topography.
    表面形貌劑 - 一種用來測量晶圓片表面形貌的工具。

    Resistivity (Electrical) - The amount of difficulty that charged carriers have in moving throughout material.
    電阻率(電學方面) - 材料反抗或對抗電荷在其中通過的一種物理特性。

    Required - The minimum specifications needed by the customer when ordering wafers.
    必需 - 訂購晶圓片時客戶必須達到的最小規格。

    Roughness - The texture found on the surface of the wafer that is spaced very closely together.
    粗糙度 - 晶圓片表面間隙很小的紋理。

    Saw Marks - Surface irregularities
    鋸痕 - 表面不規則。

    Scan Direction - In the flatness calculation, the direction of the subsites.
    掃描方向 - 平整度測量中,局部平面的方向。

    Scanner Site Flatness -
    局部平整度掃描儀 -

    Scratch - A mark that is found on the wafer surface.
    擦傷 - 晶圓片表面的痕跡。

    Secondary Flat - A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the orientation of the wafer.
    第二定位邊 - 比主定位邊小的定位邊,它的位置決定了晶圓片的類型和晶向。

    Shape -
    形狀 -

    Site - An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape)
    局部表面 - 晶圓片前面上平行或垂直于主定位邊方向的區域。

    Site Array - a neighboring set of sites
    局部表面系列 - 一系列的相關局部表面。

    Site Flatness -
    局部平整 -

    Slip - A defect pattern of small ridges found on the surface of the wafer.
    劃傷 - 晶圓片表面上的小皺造成的缺陷。

    Smudge - A defect or contamination found on the wafer caused by fingerprints.
    污跡 - 晶圓片上指紋造成的缺陷或污染。

    Sori -
    Striation - Defects or contaminations found in the shape of a helix.
    條痕 - 螺紋上的缺陷或污染。

    Subsite, of a Site - An area found within the site, also rectangular. The center of the subsite must be located within the original site.
    局部子表面 - 局部表面內的區域,也是矩形的。子站中心必須位于原始站點內部。

    Surface Texture - Variations found on the real surface of the wafer that deviate from the reference surface.
    表面紋理 - 晶圓片實際面與參考面的差異情況。

    Test Wafer - A silicon wafer that is used in manufacturing for monitoring and testing purposes.
    測試晶圓片 - 用于生產中監測和測試的晶圓片。

    Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer.
    頂部硅膜厚度 - 頂部硅層表面和氧化層表面間的距離。

    Top Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer.
    頂部硅膜 - 生產半導體電路的硅層,位于絕緣層頂部。

    Total Indicator Reading (TIR) - The smallest distance between planes on the surface of the wafer.
    總計指示劑數(TIR) - 晶圓片表面位面間的最短距離。

    Virgin Test Wafer - A wafer that has not been used in manufacturing or other processes.
    原始測試晶圓片 - 還沒有用于生產或其他流程中的晶圓片。

    Void - The lack of any sort of bond (particularly a chemical bond) at the site of bonding.
    無效 - 在應該綁定的地方沒有綁定(特別是化學綁定)。

    Waves - Curves and contours found on the surface of the wafer that can be seen by the naked eye.
    波浪 - 晶圓片表面通過肉眼能發現的彎曲和曲線。

    Waviness - Widely spaced imperfections on the surface of a wafer.
    波紋 - 晶圓片表面經常出現的缺陷。
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